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| K4E660812E Datasheet, PDF (10/21 Pages) Samsung semiconductor – 8M x 8bit CMOS Dynamic RAM with Extended Data Out | |||
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K4E660812E,K4E640812E
WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VIH -
VIL -
tRC
tR A S
tCRP
tRCD
tASR
tR A D
tRAH
tASC
ROW
ADDRESS
tC S H
tRSH
tCAS
tCAH
COLUMN
ADDRESS
tRAL
tWCS
tCWL
tRWL
tWCH
tW P
tDS
tDH
DATA-IN
CMOS DRAM
tR P
tCRP
Donâ²t care
Undefined
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