K4E660812E Datasheet, PDF (4/21 Pages) Samsung semiconductor – 8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812E,K4E640812E
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
IC C 1
Don′t care
Speed
-45
-50
-60
K4E660812E
90
80
70
Max
IC C 2
Normal
L
Don′t care
1
1
-45
90
IC C 3
Don′t care
-50
80
-60
70
-45
100
IC C 4
Don′t care
-50
90
-60
80
IC C 5
Normal
L
Don′t care
0.5
200
-45
120
IC C 6
Don′t care
-50
110
-60
100
IC C 7
L
Don′t care
350
IC C S
L
Don′t care
350
K4E640812E
120
110
100
1
1
120
110
100
100
90
80
0.5
200
120
110
100
350
350
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
ICC1* : Operating Current (RAS and CAS, Address cycling @ tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=V IH)
ICC3* : RAS-only Refresh Current (CAS =VIH, RAS cycling @ tRC=min.)
ICC4* : Extended Data Out Mode Current (RAS=VIL , CAS , Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=CAS=W=V CC -0.2V)
ICC6* : CAS-Before- RAS Refresh Current (RAS and CAS cycling @ tRC =min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VC C-0.2V, Input low voltage(VIL )=0.2V, CAS=CAS-before-RAS cycling or 0.2V
W, OE=V IH, Address=Don′t care, DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=CAS=0.2V, W=OE =A0 ~ A12(A11)=VCC -0.2V or 0.2V, DQ0 ~ DQ7=V CC-0.2V, 0.2V or Open
*Note : ICC1 , ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=V IL. In ICC4,
address can be changed maximum once within one EDO mode cycle time, tHPC.