K4T56043QF Datasheet, PDF (8/27 Pages) Samsung semiconductor – 256Mb F-die DDR2 SDRAM

256Mb F-die DDR2 SDRAM
DDR2 SDRAM
2.3 256Mb Addressing
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
64Mb x4
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9,A11
32Mb x 8
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9
* Reference information: The following tables are address mapping information for other densities.
512Mb
Configuration
128Mb x4
64Mb x 8
32Mb x16
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
4
BA0,BA1
A10/AP
A0 ~ A13
A0 ~ A9,A11
4
BA0,BA1
A10/AP
A0 ~ A13
A0 ~ A9
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9
1Gb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
256Mb x4
8
BA0 ~ BA2
A10/AP
A0 ~ A13
A0 ~ A9,A11
128Mb x 8
8
BA0 ~ BA2
A10/AP
A0 ~ A13
A0 ~ A9
64Mb x16
8
BA0 ~ BA2
A10/AP
A0 ~ A12
A0 ~ A9
2Gb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
512Mb x4
8
BA0 ~ BA2
A10/AP
A0 ~ A14
A0 ~ A9,A11
256Mb x 8
8
BA0 ~ BA2
A10/AP
A0 ~ A14
A0 ~ A9
128Mb x16
8
BA0 ~ BA2
A10/AP
A0 ~ A13
A0 ~ A9
4Gb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address/page size
1 Gb x4
8
BA0 ~ BA2
A10/AP
A0 - A15
A0 - A9,A11
512Mb x 8
8
BA0 ~ BA2
A10/AP
A0 - A15
A0 - A9
256Mb x16
8
BA0 ~ BA2
A10/AP
A0 - A14
A0 - A9
Page 8 of 27
Rev. 1.5 Feb. 2005