K4T56043QF Datasheet, PDF(25/27 Page) Samsung semiconductor

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K4T56043QF Datasheet, PDF (25/27 Pages) Samsung semiconductor – 256Mb F-die DDR2 SDRAM

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256Mb F-die DDR2 SDRAM

DDR2 SDRAM

culation is consistent.

These notes are referenced in the âTiming parameters by speed gradeâ tables for DDR2-400/533/667 and

DDR2-800.

VOH + x mV

VOH + 2x mV

tHZ

tRPST end point

VOL + 2x mV

VOL + x mV

tHZ,tRPST end point = 2*T1-T2

VTT + 2x mV

VTT + x mV

tLZ

tRPRE begin point

VTT - x mV

VTT - 2x mV

tLZ,tRPRE begin point = 2*T1-T2

29. Input waveform timing with differential data strobe enabled MR[bit10]=0, is referenced from the input sig-

nal crossing at the VIH(ac) level to the differential data strobe crosspoint for a rising signal, and from the input

signal crossing at the VIL(ac) level to the differential data strobe crosspoint for a falling signal applied to the

device under test.

30. Input waveform timing with differential data strobe enabled MR[bit10]=0, is referenced from the input sig-

nal crossing at the VIH(dc) level to the differential data strobe crosspoint for a rising signal and VIL(dc) to the

differential data strobe crosspoint for a falling signal applied to the device under test.

Differential Input waveform timing

DQS

tDS tDH

VDDQ

VIH(ac) min

VIH(dc) min

VREF(dc)

VIL(dc) max

VIL(ac) max

VSS

Page 25 of 27

Rev. 1.5 Feb. 2005

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