K4T56043QF Datasheet, PDF (16/27 Pages) Samsung semiconductor – 256Mb F-die DDR2 SDRAM

256Mb F-die DDR2 SDRAM
Input/Output capacitance
Parameter
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Symbol
CCK
CDCK
CI
CDI
CIO
CDIO
DDR2-400
DDR2-533
Min
Max
1.0
2.0
x
0.25
1.0
2.0
x
0.25
2.5
4.0
x
0.5
DDR2 SDRAM
DDR2-667
Min
Max Units
1.0
2.0
pF
x
0.25
pF
1.0
2.0
pF
x
0.25
pF
2.5
3.5
pF
x
0.5
pF
Electrical Characteristics & AC Timing for DDR2-667/533/400
(0 °C < T_CASE < 95 °C; V_DDQ = 1.8V + 0.1V; V_DD = 1.8V + 0.1V)
Refresh Parameters by Device Density
Parameter
Symbol
256Mb 512Mb 1Gb 2Gb 4Gb Units
Refresh to active/Refresh command
time
tRFC
75
105 127.5 195 327.5 ns
Average periodic refresh interval
0 °C ≤ T_CASE ≤ 85°C
7.8
7.8
7.8
7.8
7.8
µs
tREFI
85 °C < T_CASE ≤ 95°C
3.9
3.9
3.9
3.9
3.9
µs
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Speed
DDR2-667(E6)
DDR2-533(D5)
DDR2-400(CC)
Units
Bin (CL - tRCD - tRP)
5 - 5- 5
4-4-4
3-3-3
Parameter
min
max
min
max
min
max
tCK, CL=3
5
8
5
8
5
8
ns
tCK, CL=4
3.75
8
3.75
8
5
8
ns
tCK, CL=5
3
8
-
-
-
-
ns
tRCD
15
15
15
ns
tRP
15
15
15
ns
tRC
54
55
55
ns
tRAS
39
70000
40
70000
40
70000
ns
Page 16 of 27
Rev. 1.5 Feb. 2005