K4T56043QF Datasheet, PDF (19/27 Pages) Samsung semiconductor – 256Mb F-die DDR2 SDRAM

256Mb F-die DDR2 SDRAM
DDR2 SDRAM
Parameter
Symbol
Exit active power down
to read command
(slow exit, lower
power)
CKE minimum pulse
width
(high and low pulse
width)
ODT turn-on delay
ODT turn-on
tXARDS
t_CKE
t_AOND
t_AON
ODT turn-on(Power-
Down mode)
t_AONPD
ODT turn-off delay
ODT turn-off
t_AOFD
t_AOF
ODT turn-off (Power-
Down mode)
t_AOFPD
ODT to power down
entry latency
ODT power down exit
latency
OCD drive mode
output delay
Minimum time clocks
remains ON after CKE
asynchronously drops
LOW
tANPD
tAXPD
tOIT
tDelay
DDR2-667
min
max
7 - AL
DDR2-533
min max
6 - AL
DDR2-400
min
max
6 - AL
Units Notes
tCK
9, 10
3
3
3
tCK
36
2
2
2
2
2
2
tCK
tAC(mi tAC(m tAC(mi tAC(m tAC(mi tAC(ma
ns
n)
ax)+0.
n)
ax)+1
n)
x)+1
7
tAC(mi 2tCK+t tAC(mi 2tCK+t tAC(mi 2tCK+t
ns
n)+2
AC(ma
n)+2
AC(ma
n)+2
AC
x)+1
x)+1
(max)+
1
2.5
2.5
2.5
2.5
2.5
2.5
tCK
tAC(mi tAC(m tAC(min) tAC(ma tAC(mi tAC(max
ns
n)
ax)+
x)+ 0.6
n)
)+ 0.6
0.6
tAC(mi 2.5tCK tAC(mi 2.5tCK tAC(mi 2.5tCK
ns
n)+2
+tAC(
n)+2
+
n)+2
+
max)+
tAC(m
tAC(ma
1
ax)+1
x)+1
3
3
3
tCK
13, 25
26
8
8
8
tCK
0
12
0
12
0
12
ns
tIS+tCK
+tIH
tIS+tCK
+tIH
tIS+tCK
+tIH
ns
24
Page 19 of 27
Rev. 1.5 Feb. 2005