K4E660412D Datasheet, PDF (7/21 Pages) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Extended Data Out

K4E660412D,K4E640412D
CMOS DRAM
TEST MODE CYCLE
Parameter
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
RAS pulse width
CAS pulse width
RAS hold time
CAS hold time
Column Address to RAS lead time
CAS to W delay time
RAS to W delay time
Column Address to W delay time
Hyper Page cycle time
Hyper Page read-modify-write cycle time
RAS pulse width (Hyper page cycle)
Access time from CAS precharge
OE access time
OE to data delay
OE command hold time
Symbol
tRC
tRWC
tRAC
tCAC
tAA
tRAS
tCAS
tRSH
tCSH
tRAL
tCWD
tRWD
tAWD
tHPC
tHPRWC
tRASP
tCPA
tOEA
tOED
tOEH
-45
Min Max
79
110
50
17
28
50 10K
12 10K
18
39
28
29
62
40
22
52
50 200K
29
17
13
13
-50
Min Max
89
121
55
18
30
55 10K
13 10K
18
43
30
35
72
47
25
53
55 200K
33
18
18
18
-60
Min Max
109
145
65
20
35
65 10K
15 10K
20
50
35
39
84
54
30
61
65 200K
40
20
20
20
( Note 11 )
Units
Note
ns
ns
ns 3,4,10,12
ns
3,4,5,12
ns
3,10,12
ns
ns
ns
ns
ns
ns
7
ns
7
ns
7
ns
14
ns
14
ns
ns
3
ns
3
ns
ns