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| K4E660412D Datasheet, PDF (10/21 Pages) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Extended Data Out | |||
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K4E660412D,K4E640412D
WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VIH -
VIL -
tRC
tRAS
tCRP
tRCD
tASR
tRAD
tRAH
tASC
ROW
ADDRESS
tCSH
tRSH
tCAS
tCAH
COLUMN
ADDRESS
tRAL
tWCS
tCWL
tRWL
tWCH
tWP
tDS
tDH
DATA-IN
CMOS DRAM
tRP
tCRP
Donâ²t care
Undefined
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