K4E660412D Datasheet, PDF (16/21 Pages) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Extended Data Out

K4E660412D,K4E640412D
HYPER PAGE READ AND WRITE MIXED CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VI/OH -
VI/OL -
READ(tCAC)
tRASP
READ(tCPA)
WRITE
tRP
READ(tAA)
tRAD
tRAH
tASR
tASC
tCAS
tCAH
ROW
ADDR
COLUMN
ADDRESS
tHPC
tCP
tCAS
tASC
COLUMN
ADDRESS
tCAH
tHPC
tCP
tASC
tCAS
tCAH
COL.
ADDR
tRCS
tRCH tRCS
tRCH
tWCH
tWCS
tRHCP
tHPC
tCP
tCAS
tASC tCAH
COL.
ADDR
tRAL
tRCH
tWPE
tCPA
tCLZ
tWED
tOEA
tCAC
tAA
tRAC
tWEZ
VALID
DATA-OUT
tWEZ
VALID
DATA-OUT
tDH
tDS
VALID
DATA-IN
tAA
tCLZ
tREZ
VALID
DATA-OUT
Don′t care
Undefined