K4E660412D Datasheet, PDF(12/21 Page) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Extended Data Out

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

K4E660412D Datasheet, PDF (12/21 Pages) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Extended Data Out

◁

K4E660412D,K4E640412D

READ - MODIFY - WRITE CYCLE

CMOS DRAM

VIH -

RAS

VIL -

VIH -

CAS

VIL -

VIH -

VIL -

VIH -

VIL -

VIH -

VIL -

DQ0 ~ DQ3(7)

VI/OH -

VI/OL -

tRWC

tRAS

tRP

tCRP

tRCD

tASR

tRAD

tRAH

tASC

tCAH

ROW

ADDR

COLUMN

ADDRESS

tRSH

tCAS

tCSH

tAWD

tCWD

tRWD

tOEA

tRWL

tCWL

tWP

tOLZ

tCLZ

tCAC

tAA

tRAC

tOED

tOEZ

VALID

DATA-OUT

tDS

tDH

VALID

DATA-IN

Donâ²t care

Undefined

▷