K4E660412D Datasheet, PDF (4/21 Pages) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Extended Data Out

K4E660412D,K4E640412D
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
ICC1
Don′t care
Speed
-45
-50
-60
K4E660412D
90
80
70
Max
ICC2
Normal
L
Don′t care
1
1
-45
90
ICC3
Don′t care
-50
80
-60
70
-45
100
ICC4
Don′t care
-50
90
-60
80
ICC5
Normal
L
Don′t care
0.5
200
-45
120
ICC6
Don′t care
-50
110
-60
100
ICC7
L
Don′t care
350
ICCS
L
Don′t care
350
K4E640412D
120
110
100
1
1
120
110
100
100
90
80
0.5
200
120
110
100
350
350
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Extended Data Out Mode Current (RAS=VIL, CAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=CAS-before-RAS cycling or 0.2V
W, OE=VIH, Address=Don′t care, DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ3=VCC-0.2V, 0.2V or Open
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one EDO mode cycle time, tHPC.