K4E660412D Datasheet, PDF (3/21 Pages) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Extended Data Out

K4E660412D,K4E640412D
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Units
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 to +4.6
V
Voltage on VCC supply relative to VSS
VCC
-0.5 to +4.6
V
Storage Temperature
Tstg
-55 to +150
°C
Power Dissipation
PD
1
W
Short Circuit Output Current
IOS Address
50
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Supply Voltage
VCC
3.0
3.3
3.6
Ground
VSS
0
0
0
Input High Voltage
VIH
Input Low Voltage
VIL
2.0
-0.3^*2
-
Vcc+0.3^*1
-
0.8
*1 : Vcc+1.3V at pulse width≤15ns which is measured at VCC
*2 : -1.3 at pulse width≤15ns which is measured at VSS
Units
V
V
V
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Input Leakage Current (Any input 0≤VIN≤VCC+0.3V,
all other pins not under test=0 Volt)
II(L)
-5
Max
5
Units
uA
Output Leakage Current
(Data out is disabled, 0V≤VOUT≤VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-2mA)
Output Low Voltage Level(IOL=2mA)
VOH
2.4
VOL
-
-
V
0.4
V