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| K4E660412D Datasheet, PDF (13/21 Pages) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Extended Data Out | |||
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K4E660412D,K4E640412D
HYPER PAGE READ CYCLE
CMOS DRAM
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
tRASP
tCRP
tCSH
tRCD
tHPC
tCP
tCAS
¡ó
tHPC
tCP
tRHCP
tHPC
tCP
tCAS
tCAS
tCAS
tRAD
tASR tRAH tASC tCAH tASC tCAH tASC tCAH tASC tCAH
ROW
ADDR
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
ADDR
COLUMN
ADDRESS
tRP
tREZ
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VOH -
VOL -
tRCS
tRAL
tRCH
tRRH
tCPA
tCAC
tCAC
tCAC
tAA
tCPA
tAA
tAA
tCPA
tAA
tOCH
tCHO
tOEP
tOEA
tOEA
tRAC
tCAC
tDOH
tOEP
tOEZ
VALID
DATA-OUT
tOLZ
tCLZ
VALID
DATA-OUT
tOEZ
tOEA
VALID
DATA-OUT
tOEZ
VALID
DATA-OUT
Donâ²t care
Undefined
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