K4E660412D Datasheet, PDF (6/21 Pages) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Extended Data Out

K4E660412D,K4E640412D
CMOS DRAM
AC CHARACTERISTICS (Continued)
Parameter
Symbol
Data hold time
Refresh period (Normal)
Refresh period (L-ver)
Write command set-up time
CAS to W delay time
RAS to W delay time
Column address to W delay time
CAS set-up time (CAS -before-RAS refresh)
CAS hold time (CAS -before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Hyper Page cycle time
Hyper Page read-modify-write cycle time
CAS precharge time (Hyper page cycle)
RAS pulse width (Hyper page cycle)
RAS hold time from CAS precharge
OE access time
OE to data delay
CAS precharge to W delay time
Output buffer turn off delay time from OE
OE command hold time
Write command set-up time (Test mode in)
Write command hold time (Test mode in)
W to RAS precharge time (C-B-R refresh)
W to RAS hold time (C-B-R refresh)
Output data hold time
Output buffer turn off delay from RAS
Output buffer turn off delay from W
W to data delay
OE to CAS hold time
CAS hold time to OE
OE precharge time
W pulse width (Hyper Page Cycle)
RAS pulse width (C-B-R self refresh)
RAS precharge time (C-B-R self refresh)
CAS hold time (C-B-R self refresh)
tDH
tREF
tREF
tWCS
tCWD
tRWD
tAWD
tCSR
tCHR
tRPC
tCPA
tHPC
tHPRWC
tCP
tRASP
tRHCP
tOEA
tOED
tCPWD
tOEZ
tOEH
tWTS
tWTH
tWRP
tWRH
tDOH
tREZ
tWEZ
tWED
tOCH
tCHO
tOEP
tWPE
tRASS
tRPS
tCHS
-45
Min Max
7
64
128
0
24
57
35
5
10
5
24
17
47
6.5
45 200K
24
12
8
36
3
11
5
10
10
10
10
4
3
13
3
13
8
5
5
5
5
100
74
-50
-50
Min Max
7
64
128
0
27
64
39
5
10
5
28
20
47
7
50 200K
30
13
10
41
3
13
5
10
10
10
10
5
3
13
3
13
15
5
5
5
5
100
90
-50
-60
Min Max
10
64
128
0
32
77
47
5
10
5
35
25
56
10
60 200K
35
15
13
52
3
13
5
10
10
10
10
5
3
13
3
13
15
5
5
5
5
100
110
-50
Units
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
Note
9
7
7
7
7
3
14
14
3
6
11
11
6,13
6
15,16,17
15,16,17
15,16,17