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| K4E660412D Datasheet, PDF (18/21 Pages) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Extended Data Out | |||
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K4E660412D,K4E640412D
HIDDEN REFRESH CYCLE ( READ )
CMOS DRAM
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VOH -
VOL -
tRC
tRAS
tRP
tRC
tRP
tRAS
tCRP
tRCD
tRSH
tASR
tRAD
tRAH
tASC
ROW
ADDRESS
tRAL
tCAH
COLUMN
ADDRESS
tRCS
tCHR
tWRH
tAA
tOEA
OPEN
tCLZ
tRAC
tOLZ
tCAC
tREZ
tWEZ
tOEZ
DATA-OUT
tCEZ
Donâ²t care
Undefined
* In Hidden refresh cycle of 64Mb A-dile & B-die, when CAS signal transits from Low to High, the valid data may be cut off.
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