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| K4T51043QG Datasheet, PDF (6/47 Pages) Samsung semiconductor – 512Mb G-die DDR2 SDRAM Specification | |||
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K4T51043QG
K4T51083QG
K4T51163QG
DDR2 SDRAM
3.2 x8 package pinout (Top View) : 60ball FBGA Package
1
2
3
7
8
9
VDD
NU/
RDQS
VSS
A
DQ6
VSSQ
DM/
RDQS
B
VSSQ
DQS
DQS
VSSQ
VDDQ
DQ7
VDDQ
DQ1
VDDQ
C
DQ4
VSSQ
DQ3
D
VDDL
VREF
VSS
E
VDDQ
DQ2
VSSDL
DQ0
VSSQ
CK
VDDQ
DQ5
VDD
CKE
WE
F
RAS
CK
ODT
NC
BA0
BA1
G
CAS
CS
A10/AP
A1
H
A2
A0
VDD
VSS
A3
A5
J
A6
A4
A7
A9
K
A11
A8
VSS
VDD
A12
NC
L
NC
A13
Note :
1. Pins B3 and A2 have identical capacitance as pins B7 and A8.
2. For a read, when enabled, strobe pair RDQS & RDQS are identical in
function and timing to strobe pair DQS & DQS and input masking function
is disabled.
3. The function of DM or RDQS/RDQS are enabled by EMRS command.
4. VDDL and VSSDL are power and ground for the DLL.
Ball Locations (x8)
: Populated Ball
+ : Depopulated Ball
Top View (See the balls through the package)
123456789
A
+ ++
B
+ ++
C
+ ++
D
+ ++
E
+ ++
F+
+ ++
G
+ ++
+
H+
+ ++
J
+ ++
+
K+
+ ++
L
+ ++
+
6 of 47
Rev. 1.4 December 2008
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