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K4T51043QG Datasheet, PDF (35/47 Pages) Samsung semiconductor – 512Mb G-die DDR2 SDRAM Specification
K4T51043QG
K4T51083QG
K4T51163QG
DDR2 SDRAM
VDDQ
DQS
Note1
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
VDDQ
tDS tDH
VIH(AC)min
VIH(DC)min
VREF(DC)
dc to VREF
region
VIL(DC)max
dc to VREF
region
tangent
line
VIL(AC)max
tDS tDH
nominal
line
tangent
line
nominal
line
VSS
∆TR
∆TF
HRoisldinSgleSwignRaalte=
tangent line [ VREF(DC) - VIL(DC)max ]
∆TR
HFoalldlinSgleSwigRnaalte=
tangent line [ VIH(DC)min - VREF(DC) ]
∆TF
Note : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.
Figure 12 - IIIustration of tangent line for tDH (single-ended DQS)
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Rev. 1.4 December 2008