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| K4T51043QG Datasheet, PDF (29/47 Pages) Samsung semiconductor – 512Mb G-die DDR2 SDRAM Specification | |||
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K4T51043QG
K4T51083QG
K4T51163QG
DDR2 SDRAM
DQS
Note1
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
VDDQ
tDS tDH
VIH(AC)min
VREF to ac
region
VIH(DC)min
VREF(DC)
VIL(DC)max
nominal slew
rate
VIL(AC)max
tDS tDH
nominal
slew rate
VREF to ac
region
VSS
âTF
Setup Slew Rate= VREF(DC) - VIL(AC)max
Falling Signal
âTF
âTR
SeRtiuspinSgleSwignRaalte=
VIH(AC)min - VREF(DC)
âTR
Note : DQS signal must be monotonic between VIL(AC)max and VIH(AC)min.
Figure 6 - IIIustration of nominal slew rate for tDS (single-ended DQS)
29 of 47
Rev. 1.4 December 2008
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