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| K4T51043QG Datasheet, PDF (31/47 Pages) Samsung semiconductor – 512Mb G-die DDR2 SDRAM Specification | |||
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K4T51043QG
K4T51083QG
K4T51163QG
DDR2 SDRAM
DQS
Note1
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
VDDQ
VIH(AC)min
VREF to ac
region
VIH(DC)min
VREF(DC)
tDS tDH
nominal
line
tangent
line
tDS tDH
tangent
line
VIL(DC)max
VIL(AC)max
nominal
line
VSS
âTF
VREF to ac
region
âTR
Setup Slew Rate
Rising Signal=
tangent
line[VIH(AC)min
âTR
-
VREF(DC)]
Setup Slew Rate tangent line[VREF(DC) - VIL(AC)max]
Falling Signal =
âTF
Note : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.
Figure 8 - IIIustration of tangent line for tDS (single-ended DQS)
31 of 47
Rev. 1.4 December 2008
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