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| K4T51043QG Datasheet, PDF (40/47 Pages) Samsung semiconductor – 512Mb G-die DDR2 SDRAM Specification | |||
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K4T51043QG
K4T51083QG
K4T51163QG
DDR2 SDRAM
CK
CK
VDDQ
VIH(AC)min
tIS
tIH
VIH(DC)min
dc to VREF
region
VREF(DC)
VIL(DC)max
dc to VREF
region
nominal
slew rate
tIS tIH
nominal
slew rate
VIL(AC)max
VSS
Hold Slew Rate
Rising Signal =
VREF(DC) - VIL(DC)max
âTR
âTR
âTF
Hold Slew Rate
Falling Signal =
VIH(DC)min - VREF(DC)
âTF
Figure 15 - IIIustration of nominal slew rate for tIH
40 of 47
Rev. 1.4 December 2008
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