K4T51043QG Datasheet, PDF(14/47 Page) Samsung semiconductor

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K4T51043QG Datasheet, PDF (14/47 Pages) Samsung semiconductor – 512Mb G-die DDR2 SDRAM Specification

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K4T51043QG

K4T51083QG

K4T51163QG

DDR2 SDRAM

7.6 Differential input AC logic Level

Symbol

VID(AC)

VIX(AC)

Note :

Parameter

AC differential input voltage

AC differential cross point voltage

Min.

0.5

0.5 * VDDQ - 0.175

Max.

VDDQ

0.5 * VDDQ + 0.175

Units

Notes

1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or UDQS)

and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to VIH (AC) - VIL(AC).

2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ . VIX(AC)

indicates the voltage at which differential input signals must cross.

3. For information related to VPEAK value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-

tude allowed for overshoot and undershoot.

VDDQ

VTR

VCP

VID

Crossing point

VIX or VOX

VSSQ

< Differential signal levels >

7.7 Differential AC output parameters

Symbol

Parameter

Min.

Max.

Units

Note

VOX(AC) AC differential cross point voltage

0.5 * VDDQ - 0.125

0.5 * VDDQ + 0.125

Note :

1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ .

VOX(AC) indicates the voltage at which differential output signals must cross.

8.0 ODT DC electrical characteristics

PARAMETER/CONDITION

Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm

Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm

Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm

Deviation of VM with respect to VDDQ/2

Note :

1. Test condition for Rtt measurements

SYMBOL

Rtt1(eff)

Rtt2(eff)

Rtt3(eff)

delta VM

MIN NOM MAX UNITS NOTES

ohm

120

150

180

ohm

-6

Measurement Definition for Rtt(eff) : Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH (AC)) and I( VIL (AC)) respectively.

VIH (AC), VIL (AC), and VDDQ values defined in SSTL_18

Rtt(eff) = VIH(AC) - VIL (AC)

I(VIH (AC)) - I(VIL (AC))

delta VM =

2 x VM - 1 x 100%

VDDQ

Measurement Definition for VM: Measure voltage (VM) at test pin (midpoint) with no load.

14 of 47

Rev. 1.4 December 2008

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