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| K4T51043QG Datasheet, PDF (39/47 Pages) Samsung semiconductor – 512Mb G-die DDR2 SDRAM Specification | |||
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K4T51043QG
K4T51083QG
K4T51163QG
DDR2 SDRAM
CK
CK
VDDQ
VIH(AC)min
VREF to ac
region
VIH(DC)min
tIS
tIH
nominal
line
tIS tIH
tangent
line
VREF(DC)
VIL(DC)max
tangent
line
VIL(AC)max
nominal
line
VSS
âTF
VREF to ac
region
âTR
Setup Slew Rate= tangent line[VIH(AC)min - VREF(DC)]
Rising Signal
âTR
SFetaullpinSgleSwignRaalte=
tangent line[VREF(DC) - VIL(AC)max]
âTF
Figure 14 - IIIustration of tangent line for tIS
39 of 47
Rev. 1.4 December 2008
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