K4S161622E Datasheet, PDF (26/42 Pages) Samsung semiconductor – 1M x 16 SDRAM

K4S161622E
CMOS SDRAM
*Note : 1. All inputs expect CKE & DQM can be don ¡Çt care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA.
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
BA
Active & Read/Write
0
Bank A
1
Bank B
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command.
A10/AP BA
0
0
1
0
1
1
Operation
Disable auto precharge, leave bank A active at end of burst.
Disable auto precharge, leave bank B active at end of burst.
Enable auto precharge, precharge bank A at end of burst.
Enable auto precharge, precharge bank B at end of burst.
4. A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP BA
0
0
0
1
1X
Precharge
Bank A
Bank B
Both Banks
Rev 0.2 Oct. '02