K4S161622E Datasheet, PDF (10/42 Pages) Samsung semiconductor – 1M x 16 SDRAM

K4S161622E
CMOS SDRAM
BURST SEQUENCE (BURST LENGTH = 4)
Initial Address
A1
A0
Sequential
Interleave
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial Address
A2
A1
A0
Sequential
Interleave
0
0
0
0 123 4 5 6 70 123 4 5 6 7
0
0
1
1 234 5 6 7 01 032 5 4 7 6
0
1
0
2 345 6 7 0 12 301 6 7 4 5
0
1
1
3 456 7 0 1 23 210 7 6 5 4
1
0
0
4 567 0 1 2 34 567 0 1 2 3
1
0
1
5 670 1 2 3 45 476 1 0 3 2
1
1
0
6 701 2 3 4 56 745 2 3 0 1
1
1
1
7 012 3 4 5 67 654 3 2 1 0
Rev 1.1 Jan '03