K4S161622E Datasheet, PDF(16/42 Page) Samsung semiconductor

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K4S161622E Datasheet, PDF (16/42 Pages) Samsung semiconductor – 1M x 16 SDRAM

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K4S161622E

4. CAS Interrupt (II) : Read Interrupted by Write & DQM

(a) CL=2, BL=4

CLK

i) CMD

DQM

ii) CMD

RD WR

D0 D1 D2 D3

DQM

iii) CMD

Hi-Z

D0 D1 D2 D3

DQM

iv) CMD

Hi-Z D0

DQM

(b) CL=3, BL=4

CLK

i) CMD

DQM

ii) CMD

Q0 Hi-Z D0

Note 1

RD WR

D0 D1 D2 D3

DQM

iii) CMD

D0 D1 D2 D3

DQM

iii) CMD

D0 D1 D2 D3

DQM

iv) CMD

Hi-Z D0 D1 D2 D3

DQM

Hi-Z

Note 1

*Note : 1. To prevent bus contention, there should be at least one gap between data in and data out.

CMOS SDRAM

Rev 1.1 Jan '03

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