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K4H281638L Datasheet, PDF (20/32 Pages) Samsung semiconductor – 128Mb L-die DDR SDRAM Specification
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K4H281638L
DDR SDRAM
17.0 AC Operating Conditions
Parameter/Condition
Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
VIH(AC)
VREF + 0.31
V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
VIL(AC)
VREF - 0.31
V
Input Differential Voltage, CK and CK inputs
VID(AC)
0.7
VDDQ+0.6
V
1
Input Crossing Point Voltage, CK and CK inputs
VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2
V
2
I/O Reference Voltage
VREF(AC) 0.45 x VDDQ
0.55 x VDDQ
V
3
Note :
1. VID is the magnitude of the difference between the input level on CK and the input level on CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
3. VREF is expected to equal VDDQ/2 of the transmitting device and to track variations in the DC level of the same.
Peak-to-peak noise (non-common mode) on VREF may not exceed ±2 percent of the DC value. Thus, from VDDQ/2, VREF is allowed ± 25mV for
DC error and an additional ± 25mV for AC noise. This measurement is to be taken at the nearest VREF by-pass capacitor.
18.0 AC Overshoot/Undershoot specification for Address and Control Pins
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
Specification
DDR400
DDR333
1.5 V
1.5 V
1.5 V
1.5 V
4.5 V-ns
4.5 V-ns
4.5 V-ns
4.5 V-ns
VDD Overshoot
5
4
Maximum Amplitude = 1.5V
3
2
Area
1
0
-1
-2
Maximum Amplitude = 1.5V
-3
GND
-4
-5
0 0.6875 1.5 2.5 3.5 4.5 5.5 6.3125 7.0
0.5 1.0 2.0 3.0 4.0 5.0 6.0 6.5
Tims(ns)
undershoot
AC overshoot/Undershoot Definition
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Rev. 1.2 Feburary 2009
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