4570 Datasheet, PDF (56/69 Pages) Renesas Technology Corp – SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER

MITSUBISHI MICROCOMPUTERS
4570 Group
SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER
ELECTRICAL CHARACTERISTICS
(Mask ROM version:Ta = –20 °C to 70 °C, VDD = 2.0 V to 5.5 V, unless otherwise noted)
(One Time PROM version:Ta = –20 °C to 70 °C, VDD = 2.5 V to 5.5 V, unless otherwise noted)
Symbol
Parameter
Test conditions
“L” level output voltage
VOL
P0, P1, D0–D9, CARR, RESET
IOL = 5 mA
IOL = 2 mA
VDD = 5.0 V
VDD = 3.0 V
VOL
“L” level output voltage P3
IOL = 15 mA
IOL = 12 mA
VDD = 5.0 V
VDD = 3.0 V
VOH
“H” level output voltage CARR
IOH = 15 mA
IOH = –7 mA
VDD = 5.0 V
VDD = 3.0 V
“H” level input current P0, P1, P2, P3, P4,
IIH
VI = VDD (Note)
RESET, VDCE
“L” level input current P2, P3, P4, RESET,
IIL
VDCE
VI = 0 V (Note)
IOZ
Output current at off-state D0–D9
VO = VDD
VDD = 5.0 V, f(XIN) = 4.2 MHz
System clock = f(XIN)/4
VDD = 5.0 V
f(XIN) = 2 MHz
System clock = f(XIN) f(XIN) = 1 MHz
at CPU operating mode
IDD
Supply current
VDD = 3.0 V, f(XIN) = 4.2 MHz
System clock = f(XIN)/4
at RAM back-up mode
VDD = 3.0 V
f(XIN) = 1 MHz
System clock = f(XIN) _{f(XIN) = 500 kHz}
f(XIN) = stop, typical value at Ta = 25 °C
Pull-up resistor ^{P0, P1, P4}
RPH
value
RESET
VDD = 5.0 V, VI = 0 V
VDD = 3.0 V, VI = 0 V
VDD = 5.0 V, VI = 0 V
VDD = 3.0 V, VI = 0 V
VT+ – VT– Hysteresis
INT
RESET
VDD = 5.0 V
VDD = 3.0 V
VDD = 5.0 V
VDD = 3.0 V
Note: In this case, the pull-up transistor of port P4 is turned off by software.
Limits
Min. Typ.
2.4
1.0
Unit
Max.
0.9
V
0.9
1.5
V
1.5
V
1 µA
–1
µA
1 µA
1.3 2.6
1.9 3.8
1.3 2.6
mA
0.6 1.2
0.5 1.0
0.4 0.8
0.1 10 µA
20 50 125
40 100 250 ^kΩ
12 30 70
25 60 130 ^kΩ
0.5
0.4
V
1.5
V
0.6
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