PD17P709A_15 Datasheet, PDF (26/38 Pages) Renesas Technology Corp – 4-BIT SINGLE-CHIP MICROCONTROLLER WITH DEDICATED HARDWARE FOR DIGITAL TUNING SYSTEM

µPD17P709A
2.2 Program Memory Write Procedure
Program memory can be written at high speed using the following procedure.
(1) Pull down unused pins to GND via a resistor. Set the CLK pin to low.
(2) Supply 5 V to the VDD pin. Set the VPP pin to low.
(3) Wait for 10 µs and then supply 5 V to the VPP pin.
(4) Set the mode setting pin to program memory address 0-clear mode.
(5) Supply +6 V to the VDD pin and +12.5 V to the VPP pin.
(6) Set the program inhibit mode.
(7) Write data in the 1 ms write mode.
(8) Set the program inhibit mode.
(9) Set the verify mode. If the data is correct, go to step (10). If not, repeat steps (7) to (9).
(10) (X: Number of write operations from steps (7) to (9)) × 1 ms additional write.
(11) Set the program inhibit mode.
(12) Input four pulses to the CLK pin to increment the program memory address by one.
(13) Repeat steps (7) to (12) until the end address is reached.
(14) Set the program memory address 0-clear mode.
(15) Change the VDD and VPP pins to 5 V.
(16) Turn off the power.
The following figure shows steps (2) to (12).
Reset
VDD + 1
VDD
VDD
GND
VPP
VPP
VDD
GND
CLK
X repetitions
Write
Verify
Additional write
Address
increment
D0 to D7
Hi - Z
Hi - Z
Data input
Data output
Hi - Z
Data input
Hi - Z
MD0
MD1
MD2
MD3
24
Data Sheet U15723EJ1V0DS