TDA8007B Datasheet, PDF (26/36 Pages) NXP Semiconductors – Double multiprotocol IC card interface

Philips Semiconductors
Double multiprotocol IC card interface
Product specification
TDA8007B
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Card supply voltage (V_CC1 and V_CC2) (2 ceramic multilayer capacitors with low ESR of minimum 100 nF should
be used in order to meet these specifications)
V_o(inactive)
output voltage in inactive
mode
I_{VCC(inactive)} current from pin V_CC when
inactive and pin grounded
no load
I_inactive = 1 mA
0
−
0.1
V
0
−
0.3
V
−
−
−1
mA
V_CC
output voltage
active mode; I_CC < 65 mA;
5 V card
4.75
5 5.25
V
active mode; I_CC < 50 mA;
3 V card
2.78
3 3.22
V
active mode; current pulses of 4.6
−
5.4
V
40 nC with I < 200 mA;
t < 400 ns; f < 20 MHz; 5 V card
active mode; current pulses of 2.75
−
3.25
V
24 nC with I < 200 mA;
t < 400 ns; f < 20 MHz; 3 V card
I_CC
output current
3 V card; from 0 to 3 V
5 V card; from 0 to 5 V
−
−
−50
mA
−
−
−65
mA
SR
slew rate
up or down; maximum
capacitance = 300 nF
0.05
0.16 0.22
V/µs
I_CC1 + I_CC2 sum of both cards current
−
−
−80
mA
Data lines (I/O1 and I/O2) (I/O1 has an integrated 10 kΩ pull-up at V_CC1 and I/O2 at V_CC2)
V_o(inactive)
I_o(inactive)
output voltage in inactive
mode
current from I/O when
inactive and pin grounded
no load
I_inactive = 1 mA
0
−
0.1
V
−
−
0.3
V
−
−
−1
mA
V_OL
LOW-level output voltage I/O configured as an output;
0
I_OL = 1 mA
−
0.3
V
V_OH
HIGH-level output voltage I/O configured as an output;
0.8V_CC
−
V_CC + 0.25 V
I_OH < −40 µA
V_IL
LOW-level input voltage
I/O configured as an input
−0.3
−
+0.8
V
V_IH
HIGH-level input voltage
I/O configured as an input
1.5
−
V_CC
V
I_IL
LOW-level input current
V_IL = 0
on I/O
−
−
600
µA
I_LI(H)
input leakage current HIGH V_IH = V_CC
on I/O
−
−
20
µA
t_i(tr), t_i(tf)
t_o(tr), t_o(tf)
R_pu
input transition times
output transition times
internal pull-up resistance
between I/O and V_CC
C_L < = 30 pF
C_L < = 30 pF
−
−
1
µs
−
−
0.1
µs
8
10 12
kΩ
2000 Nov 09
26