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| PHPT610030NPK Datasheet, PDF (9/19 Pages) NXP Semiconductors – NPN/PNP high power double bipolar transistor | |||
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NXP Semiconductors
1
VCEsat
(V)
10-1
10-2
aaa-010263
(2) (1)
(3)
PHPT610030NPK
NPN/PNP high power double bipolar transistor
10
VCEsat
(V)
1
10-1
aaa-010264
(1)
(2)
(3)
10-2
10-3
10-1
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
10-3
10-1
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
Fig. 8. TR1 (NPN): Collector-emitter saturation voltage Fig. 9. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
as a function of collector current; typical values
103
RCEsat
(Ω)
102
aaa-010266
103
RCEsat
(Ω)
102
aaa-010268
10
10
1
10-1
(1)
(2)
(3)
10-2
10-1
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig. 10. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
1
(1)
(2)
10-1
(3)
10-2
10-1
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
Fig. 11. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
PHPT610030NPK
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
9 / 19
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