PHPT610030NPK Datasheet, PDF (2/19 Pages) NXP Semiconductors – NPN/PNP high power double bipolar transistor

NXP Semiconductors
PHPT610030NPK
NPN/PNP high power double bipolar transistor
Symbol
TR2 (PNP)
R_CEsat
Parameter
Conditions
collector-emitter
saturation resistance
I_C = -2 A; I_B = -200 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02; T_amb = 25 °C
Min Typ Max Unit
-
110 180 mΩ
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
E1
emitter TR1
2
B1
base TR1
3
E2
emitter TR2
4
B2
base TR2
5
C2
collector TR2
6
C2
collector TR2
7
C1
collector TR1
8
C1
collector TR1
Simplified outline
8765
Graphic symbol
C1 B2 E2
TR2
TR1
1234
LFPAK56D (SOT1205)
E1 B1 C2
sym139
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PHPT610030NPK
LFPAK56D
Description
Plastic single ended surface mounted package (LFPAK56D); 8
leads
Version
SOT1205
7. Marking
Table 4. Marking codes
Type number
PHPT610030NPK
Marking code
1003NPK
PHPT610030NPK
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 19