PHPT610030NPK Datasheet, PDF (13/19 Pages) NXP Semiconductors – NPN/PNP high power double bipolar transistor

NXP Semiconductors
- I_B
90 %
10 %
- I_C
90 %
PHPT610030NPK
NPN/PNP high power double bipolar transistor
- I_Bon (100 %)
input pulse
(idealized waveform)
- I_Boff
output pulse
(idealized waveform)
- I_C (100 %)
10 %
t_d
t_r
t _on
Fig. 22. TR2 (PNP): BISS transistor switching time definition
V_BB
V_CC
t_s
t _off
t
t_f
006aaa266
oscilloscope ^(probe)
450 Ω
V_I
R_B
R2
R1
Fig. 23. TR2 (PNP): Test circuit for switching times
R_C
V_{o (probe)}
oscilloscope
450 Ω
DUT
mgd624
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PHPT610030NPK
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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