PHPT610030NPK Datasheet, PDF (1/19 Pages) NXP Semiconductors – NPN/PNP high power double bipolar transistor

PHPT610030NPK
NPN/PNP high power double bipolar transistor
14 October 2014
Product data sheet
1. General description
NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-
Mounted Device (SMD) power plastic package.
NPN/NPN complement: PHPT610030NK.
PNP/PNP complement: PHPT610030PK.
2. Features and benefits
• High thermal power dissipation capability
• Suitable for high temperature applications up to 175 °C
• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Motor control
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications
• Relay replacement
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
V_CEO
collector-emitter
voltage
open base
I_C
collector current
TR1 (NPN)
R_CEsat
collector-emitter
saturation resistance
I_C = 3 A; I_B = 300 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02; T_amb = 25 °C
Min Typ Max Unit
-
-
100 V
-
-
3
A
-
75
110 mΩ
Scan or click this QR code to view the latest information for this product