 English |
|
|
|
|
|
|
|
| PHPT610030NPK Datasheet, PDF (11/19 Pages) NXP Semiconductors – NPN/PNP high power double bipolar transistor | |||
| |||
| ◁ |
NXP Semiconductors
PHPT610030NPK
NPN/PNP high power double bipolar transistor
-10
VCEsat
(V)
-1
-10-1
-10-2
aaa-010862
(1)
(2)
(3)
-10
VCEsat
(V)
-1
-10-1
-10-2
aaa-010863
(1)
(2)
(3)
-10-3
-10-1
-1
-10
-102
-103
-104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
-10-3
-10-1
-1
-10
-102
-103
-104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
Fig. 16. TR2 (PNP): Collector-emitter saturation voltage Fig. 17. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
as a function of collector current; typical values
103
RCEsat
102
aaa-010864
103
RCEsat
(Ω)
102
aaa-010865
10
1
10-1
(1)
(2)
(3)
10
(1)
1
(2)
(3)
10-1
10-2
-10-1
-1
-10
-102
-103
-104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig. 18. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
10-2
-10-1
-1
-10
-102
-103
-104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
Fig. 19. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
PHPT610030NPK
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 19
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese