PHPT610030NPK Datasheet, PDF (8/19 Pages) NXP Semiconductors – NPN/PNP high power double bipolar transistor

NXP Semiconductors
PHPT610030NPK
NPN/PNP high power double bipolar transistor
Symbol
C_c
400
h_FE
300
200
100
Parameter
collector capacitance
Conditions
V_CB = -10 V; I_E = 0 A; i_e = 0 A;
f = 1 MHz; T_amb = 25 °C
aaa-010261
3
I_B = 50 mA
(1)
45
I_C
(A)
40
35
(2)
2
(3)
1
Min Typ Max Unit
-
30
-
pF
aaa-010267
30
25
20
15
10
5
0
10^-1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 10 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 4. TR1 (NPN): DC current gain as a function of
collector current; typical values
1.2
aaa-010262
V_BE
(V)
0.8
(1)
(2)
(3)
0.4
0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 °C
Fig. 5. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
1.4
V_BEsat
(V)
1.0
0.6
(1)
(2)
(3)
aaa-010265
0
10^-1
1
10
10² 10³ 10⁴ 10⁵
I_C (mA)
V_CE = 2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 6. TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
0.2
10^-1
1
10
10² 10³ 10⁴ 10⁵
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 7. TR1 (NPN): Base-emitter saturation voltage as a
function of collector current; typical values
PHPT610030NPK
Product data sheet
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14 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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