PHPT610030NPK Datasheet, PDF (4/19 Pages) NXP Semiconductors – NPN/PNP high power double bipolar transistor

NXP Semiconductors
4
P_tot
(W)
3
(1)
2
PHPT610030NPK
NPN/PNP high power double bipolar transistor
aaa-014341
1
(2)
0
-75
0
75
Fig. 1.
(1) FR4 PCB, mounting pad for collector 6 cm²
(2) FR4 PCB, standard footprint
Per transistor: power derating curves
150
225
T_amb (°C)
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Per transistor
R_th(j-a)
thermal resistance
from junction to
ambient
in free air
R_th(j-sp)
thermal resistance
from junction to solder
point
Per device
R_th(j-a)
thermal resistance
from junction to
ambient
in free air
Min Typ Max Unit
[1]
-
-
150 K/W
[2]
-
-
62.5 K/W
-
-
6
K/W
[1]
-
-
120 K/W
[2]
-
-
50
K/W
[3]
-
-
30
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm}²_.
[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
PHPT610030NPK
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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