PHPT610030NPK Datasheet, PDF (10/19 Pages) NXP Semiconductors – NPN/PNP high power double bipolar transistor

NXP Semiconductors
PHPT610030NPK
NPN/PNP high power double bipolar transistor
500
h_FE
400
300
200
100
aaa-010858
(1)
(2)
(3)
-2.5
-45
I_C
(A)
-40
-2.0 ^-35
-30
-1.5
-1.0
-0.5
I_B = -50 mA
aaa-010859
-25
-20
-15
-10
-5
0
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
V_CE = −10 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig. 12. TR2 (PNP): DC current gain as a function of
collector current; typical values
-1.6
aaa-010860
V_BE
(V)
-1.2
(1)
-0.8
(2)
(3)
-0.4
0
0
-1
-2
-3
-4
-5
V_CE (V)
T_amb = 25 °C
Fig. 13. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
-1.2
V_BEsat
(V)
-1.0
-0.8
-0.6
-0.4
aaa-010861
(1)
(2)
(3)
0
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 14. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
-0.2
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 15. TR2 (PNP): Base-emitter saturation voltage as a
function of collector current; typical values
PHPT610030NPK
Product data sheet
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14 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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