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PHPT610030NPK Datasheet, PDF (7/19 Pages) NXP Semiconductors – NPN/PNP high power double bipolar transistor
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NXP Semiconductors
PHPT610030NPK
NPN/PNP high power double bipolar transistor
Symbol
Cc
TR2 (PNP)
ICBO
ICES
IEBO
hFE
VCEsat
RCEsat
VBEsat
VBEon
td
tr
ton
ts
tf
toff
fT
Parameter
collector capacitance
Conditions
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
collector-base cut-off
current
VCB = -80 V; IE = 0 A
VCB = -80 V; IE = 0 A; Tj = 150 °C
collector-emitter cut-off VCE = -80 V; VBE = 0 V
current
emitter-base cut-off
current
VEB = -7 V; IC = 0 A
DC current gain
VCE = -10 V; IC = -500 mA;
Tamb = 25 °C
VCE = -10 V; IC = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
collector-emitter
saturation voltage
VCE = -10 V; IC = -2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -10 V; IC = -3 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -500 mA; IB = -50 mA;
Tamb = 25 °C
IC = -2 A; IB = -0.2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
base-emitter saturation IC = -1 A; IB = -50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
base-emitter turn-on
voltage
delay time
rise time
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -2 V; IC = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCC = -12.5 V; IC = -1 A; IBon = -50 mA;
IBoff = 50 mA; Tamb = 25 °C
turn-on time
storage time
fall time
turn-off time
transition frequency
VCE = -10 V; IC = -100 mA;
f = 100 MHz; Tamb = 25 °C
Min Typ Max Unit
-
11
-
pF
-
-
-100 nA
-
-
-50 µA
-
-
-100 nA
-
-
-100 nA
150 200 -
80
210 -
20
100 -
10
40
-
-
-70 -110 mV
-
-220 -360 mV
-
110 180 mΩ
-
-0.91 -1
V
-
-1.02 -1.2 V
-
-0.68 -0.9 V
-
20
-
ns
-
180 -
ns
-
200 -
ns
-
350 -
ns
-
220 -
ns
-
570 -
ns
-
125 -
MHz
PHPT610030NPK
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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