PHPT610030NPK Datasheet, PDF (3/19 Pages) NXP Semiconductors – NPN/PNP high power double bipolar transistor

NXP Semiconductors
PHPT610030NPK
NPN/PNP high power double bipolar transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
V_CBO
collector-base voltage
open emitter
V_CEO
collector-emitter voltage
open base
V_EBO
emitter-base voltage
open collector
I_C
collector current
I_CM
peak collector current
single pulse; t_p ≤ 1 ms
I_B
base current
P_tot
total power dissipation
T_amb ≤ 25 °C
T_amb ≤ 25 °C
Per device
P_tot
total power dissipation
T_amb ≤ 25 °C
T_j
T_amb
T_stg
junction temperature
ambient temperature
storage temperature
Min Max Unit
-
-
-
-
-
-
[1]
-
[2]
-
[3]
-
100 V
100 V
7
V
3
A
8
A
0.5 A
1
W
2.4 W
25
W
[1]
-
1.25 W
[2]
-
3
W
[4]
-
5
W
-
175 °C
-55 175 °C
-65 175 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm}²_.
[3] Power dissipation from junction to mounting base.
[4] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
PHPT610030NPK
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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