LP3971 Datasheet, PDF (8/42 Pages) National Semiconductor (TI) – POWER MANAGEMENT UNIT FOR ADVANCED APPLICATION PROCESSORS

LDO RTC
Unless otherwise noted, V_IN = 3.6V, C_IN = 1.0 µF, C_OUT = 0.47 µF, C_OUT (V_RTC) = 1.0 µF ceramic. Typical values and limits
appearing in normal type apply for T_J = 25˚C. Limits appearing in boldface type apply over the entire junction temperature
range for operation, −40˚C to +125˚C. (Notes 2, 6, 7) and (Note 10)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V_OUT
Output Voltage Accuracy
Accuracy
V_IN Connected, Load Current =
2.632
2.8
2.968
V
1 mA
∆V_OUT Line Regulation
V_IN = (V_OUT nom + 1.0V) to 5.5V
(Note 11) Load Current = 1 mA
0.15
%/V
Load Regulation
From Main Battery
0.05
Load Current = 1 mA to 30 mA
From Backup Battery
0.5
%/mA
V_IN = 3.0V
Load Current = 1 mA to 10 mA
I_SC
Short Circuit Current Limit
From Main Battery
V_IN = V_OUT +0.3V to 5.5V
From Backup Battery
100
mA
30
V_IN -
V_OUT
I_Q_Max
TP1
Dropout Voltage
Maximum Quiescent Current
RTC LDO Input Switched from
Main Battery to Backup Battery
Load Current = 10 mA
I_OUT = 0 mA
V_IN Falling
375
mV
30
µA
2.9
V
TP2
RTC LDO Input Switched from
V_IN Rising
Backup Battery to Main Battery
3.0
V
C_O
Output Capacitor
Capacitance for Stability
ESR
0.7
1.0
µF
5
500
mΩ
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