DS90UR241Q Datasheet, PDF (3/26 Pages) National Semiconductor (TI) – 5-43 MHz DC-Balanced 24-Bit FPD-Link II Serializer and Deserializer Chipset

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V_DD)
LVCMOS Input Voltage
LVCMOS Output Voltage
LVDS Receiver Input Voltage
−0.3V to +4V
−0.3V to (V_DD +0.3V)
−0.3V to (V_DD +0.3V)
−0.3V to +3.9V
LVDS Driver Output Voltage
−0.3V to +3.9V
LVDS Output Short Circuit Duration
10 ms
Junction Temperature
+150°C
Storage Temperature
−65°C to +150°C
Lead Temperature
(Soldering, 4 seconds)
+260°C
Maximum Package Power Dissipation Capacity (Note 2)
Package De-rating:
DS90UR241 − 48L TQFP
1/θ_JA °C/W above +25°C
   θ_JA
   θ_JC
DS90UR124 − 64L TQFP
45.8 (4L*); 75.4 (2L*) °C/W
21.0°C/W
   θ_JA
   θ_JC
42.8 (4L*); 67.2 (2L*)°C/W
14.6°C/W
ESD Rating (HBM)
≥±8 kV
ESD Rating (ISO10605)
R_D = 2 kΩ, C_S = 330 pF
 
Contact Discharge (D_OUT+, D_OUT−)
±10 kV
 
Air Discharge (D_OUT+, D_OUT−)
±30 kV
 
Contact Discharge (R_IN+, R_IN−)
±10 kV
 Air Discharge (R_IN+, R_IN−)
±30 kV
Recommended Operating
Conditions
Min Nom Max
Supply Voltage (V_DD)
3.0
3.3
3.6
Operating Free Air
Temperature (T_A)
−40
+25 +105
Clock Rate
5
43
Supply Noise
±100
Units
V
°C
MHz
mV_P-P
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol
Parameter
LVCMOS DC SPECIFICATIONS
V_IH
High Level Input Voltage
V_IL
Low Level Input Voltage
V_CL
Input Clamp Voltage
Conditions
I_CL = −18 mA
I_IN
Input Current
V_IN = 0V or 3.6V
V_OH
High Level Output Voltage
I_OH = −2 mA, SLEW = L
I_OH = −4 mA, SLEW = H
V_OL
Low Level Output Voltage
I_OL = +2 mA, SLEW = L
I_OL = +4 mA, SLEW = H
I_OS
Output Short Circuit Current V_OUT = 0V
I_OZ
TRI-STATE^® Output Current RPWDNB, REN = 0V,
V_OUT = 0V or V_DD
Pin/Freq.
Min Typ Max Units
Tx: D_IN[0:23], TCLK, 2.0
TPWDNB, DEN, TRFB, _GND
RAOFF, VODSEL,
V_DD
V
0.8 V
RES0.
Rx: RPWDNB, RRFB,
REN, PTOSEL,
−0.8 −1.5 V
BISTEN, BISTM,
SLEW, RES0.
Tx: D_IN[0:23], TCLK,
TPWDNB, DEN, TRFB,
RAOFF, RES0.
Rx: RRFB, REN,
−10 ±2 +10 µA
PTOSEL, BISTEN,
BISTM, SLEW, RES0.
Rx: RPWDNB
−20 ±5 +20 µA
Rx: R_OUT[0:23], RCLK, _2.3
LOCK, PASS.
3.0
V_DD
V
GND 0.33 0.5 V
−40 −70 −110 mA
Rx: R_OUT[0:23], RCLK, _{−30 ±0.4 +30 µA}
LOCK, PASS.
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