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MC68HC908GZ16 Datasheet, PDF (46/314 Pages) Motorola, Inc – Microcontrollers
Memory
2.6.6 FLASH Block Protection
Due to the ability of the on-board charge pump to erase and program the FLASH memory in the target
application, provision is made for protecting a block of memory from unintentional erase or program
operations due to system malfunction. This protection is done by using of a FLASH block protect register
(FLBPR). The FLBPR determines the range of the FLASH memory which is to be protected. The range
of the protected area starts from a location defined by FLBPR and ends at the bottom of the FLASH
memory ($FFFF). When the memory is protected, the HVEN bit cannot be set in either ERASE or
PROGRAM operations.
NOTE
In performing a program or erase operation, the FLASH block protect
register must be read after setting the PGM or ERASE bit and before
asserting the HVEN bit
When the FLBPR is program with all 0’s, the entire memory is protected from being programmed and
erased. When all the bits are erased (all 1’s), the entire memory is accessible for program and erase.
When bits within the FLBPR are programmed, they lock a block of memory, address ranges as shown in
2.6.7 FLASH Block Protect Register. Once the FLBPR is programmed with a value other than $FF or $FE,
any erase or program of the FLBPR or the protected block of FLASH memory is prohibited. Mass erase
is disabled whenever any block is protected (FLBPR does not equal $FF). The presence of a VTST on the
IRQ pin will bypass the block protection so that all of the memory included in the block protect register is
open for program and erase operations.
NOTE
The FLASH block protect register is not protected with special hardware or
software. Therefore, if this page is not protected by FLBPR the register is
erased by either a page or mass erase operation.
2.6.7 FLASH Block Protect Register
The FLASH block protect register (FLBPR) is implemented as a byte within the FLASH memory, and
therefore can only be written during a programming sequence of the FLASH memory. The value in this
register determines the starting location of the protected range within the FLASH memory.
Address: $FF7E
Bit 7
6
5
4
3
2
1
Read:
BPR7
Write:
BPR6
BPR5
BPR4
BPR3
BPR2
BPR1
Reset: U
U
U
U
U
U
U
U = Unaffected by reset. Initial value from factory is 1.
Write to this register is by a programming sequence to the FLASH memory.
Figure 2-5. FLASH Block Protect Register (FLBPR)
Bit 0
BPR0
U
BPR[7:0] — FLASH Block Protect Bits
These eight bits represent bits [13:6] of a 16-bit memory address.
Bit 15 and Bit 14 are 1s and bits [5:0] are 0s.
MC68HC908GZ16 • MC68HC908GZ8 Data Sheet, Rev. 1
46
Freescale Semiconductor