English
Language : 

MC68HC908GZ16 Datasheet, PDF (303/314 Pages) Motorola, Inc – Microcontrollers
21.15 Memory Characteristics
Memory Characteristics
Characteristic
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
Limited endurance (<1 K cycles)
Maximum endurance (>1 K cycles)
FLASH mass erase time
FLASH PGM/ERASE to HVEN setup time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH endurance(6)
FLASH data retention time(7)
Symbol
VRDR
—
fRead(1)
tErase(2)
tMErase(3)
tNVS
tNVH
tNVHL
tPGS
tPROG
tRCV(4)
tHV(5)
—
—
Min
1.3
1
0
0.9
3.6
4
10
5
100
5
30
1
—
10 k
15
Typ
—
—
—
1
4
—
—
—
—
—
—
—
—
100 k
100
Max
Unit
—
V
—
MHz
8M
Hz
1.1
ms
5.5
—
ms
—
µs
—
µs
—
µs
—
µs
40
µs
—
µs
4
ms
—
Cycles
—
Years
1. fRead is defined as the frequency range for which the FLASH memory can be read.
2. If the page erase time is longer than tErase (min), there is no erase disturb, but it reduces the endurance of the FLASH
memory.
3. If the mass erase time is longer than tMErase (min), there is no erase disturb, but it reduces the endurance of the FLASH
memory.
4. tRCV is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clear-
ing HVEN to 0.
5. tHV is defined as the cumulative high voltage programming time to the same row before next erase.
tHV must satisfy this condition: tNVS + tNVH + tPGS + (tPROG x 32) ≤ tHV maximum.
6. Typical endurance was evaluated for this product family. For additional information on how Freescale Semiconductor
defines Typical Endurance, please refer to Engineering Bulletin EB619.
7. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines Typical Data
Retention, please refer to Engineering Bulletin EB618.
MC68HC908GZ16 • MC68HC908GZ8 Data Sheet, Rev. 1
Freescale Semiconductor
303