CM50MXA-24S Datasheet, PDF (9/14 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, R_G=13 Ω, INDUCTIVE LOAD
---------------: T_j =150 °C, - - - - -: T_j =125 °C
1000
t_f
t_d(off)
100
t_d(on)
10
t_r
1
1
10
100
COLLECTOR CURRENT I_C (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, R_G=13 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T_j =150 °C, - - - - -: T_j =125 °C
100
10
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, I_C=50 A, INDUCTIVE LOAD
---------------: T_j =150 °C, - - - - -: T_j =125 °C
1000
t_f
t_d(off)
100
t_d(on)
t_r
10
10
100
1000
EXTERNAL GATE RESISTANCE R_G (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, I_C=50 A,
INDUCTIVE LOAD, PER PULSE
---------------: T_j =150 °C, - - - - -: T_j =125 °C
100
10
E_rr
1
E_off
1
0.1
E_on
0.1
1
10
COLLECTOR CURRENT I_C (A)
EMITTER CURRENT I_E (A)
0.01
100
Publication Date : September 2012
9
E_on
10
E_off
E_rr
1
10
100
1000
EXTERNAL GATE RESISTANCE R_G (Ω)