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CM50MXA-24S Datasheet, PDF (10/14 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, Tj =25 °C
100
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=13 Ω, INDUCTIVE LOAD
---------------: Tj =150 °C, - - - - -: Tj =125 °C
1000
10
Cies
1
Coes
0.1
Cres
0.01
0.1
1
10
100
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC=50 A, Tj=25 °C
20
15
10
5
trr
100
Irr
10
1
10
100
EMITTER CURRENT IE (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
Single pulse, TC=25 °C
R t h ( j - c ) Q =0.35 K/W, R t h ( j - c ) D =0.63 K/W
1
0.1
0.01
0
0
50
100
150
200
GATE CHARGE QG (nC)
0.001
0.00001 0.0001 0.001
0.01
0.1
1
10
TIME (S)
Publication Date : September 2012
10
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