CM50MXA-24S Datasheet, PDF (3/14 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (T _j =25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
I_CES
I_GES
V_GE(th)
V_CEsat
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
V_CE=V_CES, G-E short-circuited
-
V_GE=V_GES, C-E short-circuited
-
I_C=5 mA, V_CE=10 V
5.4
I_C=50 A ^(Note6) ,
T _j =25 °C
-
V_GE=15 V,
T _j =125 °C
-
( Terminal)
T _j =150 °C
-
I_C=50 A ^(Note6) ,
T _j =25 °C
-
V_GE=15 V,
T _j =125 °C
-
(Chip)
T _j =150 °C
-
-
1.0
mA
-
0.5
μA
6.0
6.6
V
1.80
2.25
2.00
-
V
2.05
-
1.70
2.15
1.90
-
V
1.95
-
C_ies
C_oes
C_res
Input capacitance
Output capacitance
Reverse transfer capacitance
V_CE=10 V, G-E short-circuited
-
-
5.0
-
-
1.0
nF
-
-
0.08
Q_G
t_d(on)
t_r
t_d(off)
t_f
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_CC=600 V, I_C=50 A, V_GE=15 V
-
V_CC=600 V, I_C=50 A, V_GE=±15 V,
-
-
R_G=13 Ω, Inductive load
-
-
I_E=50 A ^(Note6) ,
G-E short-circuited,
T _j =25 °C
-
T _j =125 °C
-
117
-
nC
-
300
-
200
ns
-
600
-
300
1.80
2.25
1.80
-
V
V (Note1)
EC
Emitter-collector voltage
(Terminal)
I_E=50 A ^(Note6) ,
G-E short-circuited,
T _j =150 °C
-
T _j =25 °C
-
T _j =125 °C
-
1.80
-
1.70
2.15
1.70
-
V
t (Note1)
rr
Q (Note1)
rr
Reverse recovery time
Reverse recovery charge
(Chip)
T _j =150 °C
-
V_CC=600 V, I_E=50 A, V_GE=±15 V,
-
R_G=13 Ω, Inductive load
-
1.70
-
-
300
ns
2.7
-
μC
E_on
E_off
E ^(Note1)
rr
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
V_CC=600 V, I_C=I_E=50 A,
V_GE=±15 V, R_G=13 Ω, T _j =150 °C,
Inductive load
-
5.5
-
mJ
-
5.3
-
-
4.5
-
mJ
R_CC'+EE'
r_g
Internal lead resistance
Internal gate resistance
Main terminals-chip, per switch,
T_C=25 °C ^(Note4)
Per switch
-
-
5.0
mΩ
-
0
-
Ω
BRAKE PART IGBT/CLAMPDi
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
I_CES
I_GES
V_GE(th)
V_CEsat
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
V_CE=V_CES, G-E short-circuited
-
V_GE=V_GES, C-E short-circuited
-
I_C=3.5 mA, V_CE=10 V
5.4
I_C=35 A ^(Note6) ,
T _j =25 °C
-
V_GE=15 V,
T _j =125 °C
-
( Terminal)
T _j =150 °C
-
I_C=35 A ^(Note6) ,
T _j =25 °C
-
V_GE=15 V,
T _j =125 °C
-
(Chip)
T _j =150 °C
-
-
1.0
mA
-
0.5
μA
6.0
6.6
V
1.80
2.25
2.00
-
V
2.05
-
1.70
2.15
1.90
-
V
1.95
-
C_ies
C_oes
C_res
Q_G
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V_CE=10 V, G-E short-circuited
V_CC=600 V, I_C=35 A, V_GE=15 V
-
-
3.5
-
-
0.7
nF
-
-
0.06
-
82
-
nC
Publication Date : September 2012
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