CM50MXA-24S Datasheet, PDF (11/14 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
BRAKE PART
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
V_GE=15 V
3.5
(Chip)
3
T_j =150 °C
2.5
T_j =125 °C
2
1.5
T _j =25 °C
1
0.5
0
0
10
20
30
40
50
60
70
COLLECTOR CURRENT I_C (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, R_G=18 Ω, INDUCTIVE LOAD
---------------: T_j =150 °C, - - - - -: T_j =125 °C
1000
t_f
100
t_d(on)
t_d(off)
10
t_r
CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
100
T_j =125 °C
(Chip)
T_j =150 °C
10
T _j =25 °C
1
0
0.5
1
1.5
2
2.5
3
FORWARD CURRENT I_F (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, I_C=35 A, V_GE=±15 V, INDUCTIVE LOAD
---------------: T_j =150 °C, - - - - -: T_j =125 °C
1000
t_d(off)
t_f
100
t_d(on)
t_r
1
1
10
100
COLLECTOR CURRENT I_C (A)
10
10
100
1000
EXTERNAL GATE RESISTANCE R_G (Ω)
Publication Date : September 2012
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