CM50MXA-24S Datasheet, PDF (6/14 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: FWDi (*=U/V/W), DiBr: ClampDi, CR*P/CR*N: ConvDi (*=R/S/T), Th: NTC thermistor
TEST CIRCUIT AND WAVEFORMS
i_E
vGE
*:U, V, W
P1
90 %
G*P
-V_GE
Load
*
0V
+ VCC
i_C
+VGE
0V
-VGE
R_G
G*N
v_GE
Es
v_{C E}
i_C
N1
0A
t_{d(o n)}
t_r
t_{d (off)}
Switching characteristics test circuit and waveforms
0
t
90 %
10%
t_f
t
i_E
I_E
0A
I_rr
Q _rr=0.5×I_{r r} ×t_{r r}
t_rr
t
0.5 ×I _{r r}
trr, Qrr test waveform
I_CM
v_CE
i_C
V_CC
i_C
V_CC
I_CM
v_CE
i_E
I_EM
0A
v_EC
V_CC
t
0.1×I_CM
0
0.1×V_CC
t
0.1×V_CC
0
0.02×I_{CM t}
0V
t
t_i
IGBT Turn-on switching energy
t_i
IGBT Turn-off switching energy
t_i
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : September 2012
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