English
Language : 

CM50MXA-24S Datasheet, PDF (4/14 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
◁
< IGBT MODULES >
CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; T j =25 °C, unless otherwise specified)
BRAKE PART IGBT/CLAMPDi
Symbol
Item
Conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VF
Forward voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
Eon
Turn-on switching energy per pulse
Eoff
Turn-off switching energy per pulse
Err
Reverse recovery energy per pulse
rg
Internal gate resistance
CONVERTER PART CONVDi
Symbol
Item
VCC=600 V, IC=35 A, VGE=±15 V,
RG=18 Ω, Inductive load
IF=35 A (Note6) ,
G-E short-circuited,
(Terminal)
IF=35 A (Note6) ,
G-E short-circuited,
(Chip)
VCC=600 V, IF=35 A, VGE=±15 V,
RG=18 Ω, Inductive load
VCC=600 V, IC=IF=35 A,
VGE=±15 V, RG=18 Ω, T j =150 °C,
Inductive load
-
T j =25 °C
T j =125 °C
T j =150 °C
T j =25 °C
T j =125 °C
T j =150 °C
Conditions
IRRM
VF
( Terminal)
Repetitive peak reverse current
Forward voltage
NTC THERMISTOR PART
Symbol
Item
VR=VRRM, T j =150 °C
IF=50 A (Note6)
Conditions
R25
∆R/R
B(25/50)
P25
Zero-power resistance
Deviation of resistance
B-constant
Power dissipation
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Item
TC=25 °C (Note4)
R100=493 Ω, TC=100 °C (Note4)
Approximate by equation (Note7)
TC=25 °C (Note4)
Conditions
Rth(j-c)Q
Rth(j-c)D
Rth(j-c)Q
Rth(j-c)D
Rth(j-c)D
Rth(c-s)
Thermal resistance (Note4)
Contact thermal resistance (Note4)
Junction to case, per Inverter IGBT
Junction to case, per Inverter FWDi
Junction to case, per Brake IGBT
Junction to case, per Brake ClampDi
Junction to case, per Converter ConvDi
Case to heat sink, per 1 module,
Thermal grease applied (Note8)
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
Min.
4.85
-7.3
-
-
Min.
-
-
-
-
-
-
Limits
Typ.
-
-
-
-
1.80
1.80
1.80
1.70
1.70
1.70
-
1.9
4.2
3.7
3.5
0
Limits
Typ.
-
1.2
Limits
Typ.
5.00
-
3375
-
Limits
Typ.
-
-
-
-
-
15
Unit
Max.
300
200
ns
600
300
2.25
-
V
-
2.15
-
V
-
300
ns
-
μC
-
mJ
-
-
mJ
-
Ω
Unit
Max.
6.0
mA
1.6
V
Unit
Max.
5.15
kΩ
+7.8
%
-
K
10
mW
Max.
0.35
0.63
0.42
0.69
0.33
-
Unit
K/W
K/W
K/W
K/kW
Publication Date : September 2012
4
 ▷