CM50MXA-24S Datasheet, PDF (12/14 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM50MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
BRAKE PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, R_G=18 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T_j =150 °C, - - - - -: T_j =125 °C
100
10
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V_CC=600 V, I_C/I_F=35 A, V_GE=±15 V,
INDUCTIVE LOAD, PER PULSE
---------------: T_j =150 °C, - - - - -: T_j =125 °C
100
10
E_rr
1
1
E_off
0.1
E_on
0.1
1
10
COLLECTOR CURRENT I_C (A)
FORWARD CURRENT I_F (A)
0.01
100
CLAMP DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
V_CC=600 V, V_GE=±15 V, R_G=18 Ω, INDUCTIVE LOAD
---------------: T_j =150 °C, - - - - -: T_j =125 °C
1000
E_on
10
E_off
E_rr
1
10
100
1000
EXTERNAL GATE RESISTANCE R_G (Ω)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
Single pulse, T_C=25 °C
R _{t h ( j - c ) Q} =0.42 K/W, R _{t h ( j - c ) D} =0.69 K/W
1
0.1
100
t_rr
0.01
I_rr
10
1
10
FORWARD CURRENT I_F (A)
Publication Date : September 2012
100
12
0.001
0.00001 0.0001 0.001
0.01
0.1
1
10
TIME (S)